Samsung Electronics today announced that it has started mass producing the fifth-generation V-NAND memory chips that will enable the fastest data transfer.
Based on ‘Toggle DDR 4.0’ interface, the new V-NAND can reach speeds of up to a blistering 1.4Gbps for transmitting data between storage and memory. It also offers the fastest data write speed available till date at 500-microseconds (μs) which is 30 percent more over the write speed of the previous generation.
The memory chips consist of more than 90 layers of ‘3D charge trap flash (CTF) cells.’ Now the company is looking to ramp up the production of its fifth-generation V-NAND chips so that it can be used in a wide range of market needs.
“Samsung’s fifth-generation V-NAND products and solutions will deliver the most advanced NAND in the rapidly growing premium memory market,” said Kye Hyun Kyung, executive vice president of Flash Product and Technology at Samsung Electronics. “In addition to the leading-edge advances we are announcing today, we are preparing to introduce 1-terabit (Tb) and quad-level cell (QLC) offerings to our V-NAND lineup that will continue to drive momentum for next-generation NAND memory solutions throughout the global market.”