Samsung Announces Industry’s First 1TB eUFS to be Used in Next-Gen Mobile Devices

Samsung 1TB eUFS

As the world’s leading memory manufacturer, Samsung Electronics will start the mass production of the industry’s first 1TB embedded Universal Flash Storage (eUFS 2.1). It will bring a better experience to the next generation of mobile devices.

Samsung introduced the industry’s first 128GB eUFS solution four years ago. But now it has pushed the storage benchmark in the smartphone space to terabytes, speed, and capacity comparable to advanced notebooks.

Cheol Choi, executive vice president of memory marketing at Samsung Electronics, said: “The 1TB eUFS is expected to play a key role in driving the next generation of mobile devices.”

“What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market,” he said.

In the same package size (11.5 × 13.0 mm2), using 16 layers of Samsung’s most advanced 512Gb V-NAND flash and newly developed dedicated controllers the 1TB eUFS doubles the capacity of the previous 512GB version.

1TB eUFS Storage and Speed

With 1TB of capacity, the smartphone can now record 260 segments of 4K UHD (3840×2160) video for 10 minutes. In contrast, the 64GB eUFS model can only store approximately 13 segments of the same type of video.

The 1TB eUFS also delivers exceptional speed, allowing users to transfer large amounts of multimedia content in a very short time – up to 1000 MB/s. In contrast, the traditional 2.5-inch SATA Solid State Drive (SSD) has a continuous read speed of about half that of a 1TB eUFS.

This means that we can copy 5GB of Full HD video from the NVMe SSD in 5 seconds – 10 times faster than a typical microSD card.

In addition, the random read speed of the 1TB eUFS is also 38% higher than the 512GB version (up to 58k IOPS). Random writes are 500 times faster than high-performance microSD cards (100 IOPS) and can be up to 50k IOPS.


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